OFC 2025: TSMC's Silicon Nitride (SiN) Progress on Its Silicon Photonics Platform
Updated: 21 hours ago
🧩 Architecture and integration concept
TSMC introduced a compact universal photonic engine (CUPE) that supports short-reach, high-speed electro-optical interconnect (EIC to PIC).
Integrated components include:
Low-loss silicon grating couplers
Silicon nitride H-couplers (expanding I/O options)
🔧 SiN process and optimization strategy
Uses a low-temperature PECVD process to deposit silicon nitride, avoiding thermal damage to the high-performance silicon active devices built in the front-end process.
Module-level optimization of the PECVD process improves thickness and refractive-index uniformity:
3σ thickness variation: 2.3%
3σ refractive-index variation: 0.2%
After optimization, MZI channel drift is reduced, which benefits filter applications (e.g., MZI-based mux/demux).
📉 SiN waveguide and component loss performance
Component type | Loss before optimization (dB/cm) | Loss after optimization (dB/cm) |
Single-mode waveguide | ~0.4 | 0.16 |
Multimode waveguide | ~0.4 | 0.12 |
Baseline: LPCVD | Higher even without optimization | - |
📐 Special component design and performance
Bends:
Conventional bend loss is high because of the low index contrast.
An advanced design reduces bend radius and scattering loss: 0.005 dB / 30 µm radius
Other passive components:
Taper: < 0.005 dB
Crossing: ~0.05 dB, crosstalk < -50 dB
1x2 MMI: ~0.1 dB, bandwidth > 18 nm
🔄 SiN-to-Si waveguide transition
Main challenge: a large TM-mode index mismatch, causing high loss and reflection.
Solution: locally thinning the silicon (from 270 nm) to improve TE/TM mode index matching.
Result: insertion loss ~0.05 dB (TE / TM)
↔️ Edge coupler design
Uses a small tip (< 200 nm), a self-aligned structure and substrate removal.
Performance:
TE/TM insertion loss < 1 dB
PDL < 0.2 dB
3σ variation: 0.3–0.5 dB
Bandwidth > 100 nm
Supports FAUs with up to 8 channels
🧰 PDK status
A SiN component library has been established, including:
Single-mode / multimode waveguides
Bends, tapers, crossings
1x2 MMI, edge coupler, SiN-Si transition
🔚 Summary
Low-loss, highly uniform SiN components have been successfully integrated into TSMC's silicon photonics platform.
Without affecting the performance of silicon active devices.
Promising for high-speed datacom, especially for flexible and diverse optical I/O needs.
Slides from the presentation follow below












Comments