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OFC 2025: TSMC's Silicon Nitride (SiN) Progress on Its Silicon Photonics Platform

3 days ago
2 min read

Updated: 21 hours ago

🧩 Architecture and integration concept

  • TSMC introduced a compact universal photonic engine (CUPE) that supports short-reach, high-speed electro-optical interconnect (EIC to PIC).

  • Integrated components include:

    • Low-loss silicon grating couplers

    • Silicon nitride H-couplers (expanding I/O options)


🔧 SiN process and optimization strategy

  • Uses a low-temperature PECVD process to deposit silicon nitride, avoiding thermal damage to the high-performance silicon active devices built in the front-end process.

  • Module-level optimization of the PECVD process improves thickness and refractive-index uniformity:

    • 3σ thickness variation: 2.3%

    • 3σ refractive-index variation: 0.2%

  • After optimization, MZI channel drift is reduced, which benefits filter applications (e.g., MZI-based mux/demux).


📉 SiN waveguide and component loss performance

Component type

Loss before optimization (dB/cm)

Loss after optimization (dB/cm)

Single-mode waveguide

~0.4

0.16

Multimode waveguide

~0.4

0.12

Baseline: LPCVD

Higher even without optimization

-

📐 Special component design and performance

  • Bends:

    • Conventional bend loss is high because of the low index contrast.

    • An advanced design reduces bend radius and scattering loss: 0.005 dB / 30 µm radius

  • Other passive components:

    • Taper: < 0.005 dB

    • Crossing: ~0.05 dB, crosstalk < -50 dB

    • 1x2 MMI: ~0.1 dB, bandwidth > 18 nm


🔄 SiN-to-Si waveguide transition

  • Main challenge: a large TM-mode index mismatch, causing high loss and reflection.

  • Solution: locally thinning the silicon (from 270 nm) to improve TE/TM mode index matching.

    • Result: insertion loss ~0.05 dB (TE / TM)


↔️ Edge coupler design

  • Uses a small tip (< 200 nm), a self-aligned structure and substrate removal.

  • Performance:

    • TE/TM insertion loss < 1 dB

    • PDL < 0.2 dB

    • 3σ variation: 0.3–0.5 dB

    • Bandwidth > 100 nm

    • Supports FAUs with up to 8 channels


🧰 PDK status

  • A SiN component library has been established, including:

    • Single-mode / multimode waveguides

    • Bends, tapers, crossings

    • 1x2 MMI, edge coupler, SiN-Si transition


🔚 Summary

  • Low-loss, highly uniform SiN components have been successfully integrated into TSMC's silicon photonics platform.

  • Without affecting the performance of silicon active devices.

  • Promising for high-speed datacom, especially for flexible and diverse optical I/O needs.


Slides from the presentation follow below


OFC 2025 – Summary illustration

OFC 2025 – Summary illustration 2

OFC 2025 – Summary illustration 3

OFC 2025 – Summary illustration 4


OFC 2025 – Summary illustration 5

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OFC 2025 – Summary illustration 10









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